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A 6-μm2 bipolar transistor using 0.25-μm process technology for high-speed applications

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8 Author(s)
T. Hashimoto ; Device Dev. Center, Hitachi Ltd., Tokyo, Japan ; T. Kikuchi ; K. Watanabe ; S. Wada
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An advanced bipolar-process integration technology was developed and used for fabricating a 6-μm2-cell-size transistor with high cut-off frequency of 40 GHz. This process uses 0.25-μm lithography technology and shallow and deep trench isolations for reducing parasitic capacitance. ECL circuit performance is consequently improved up to 25 ps. A combination of low-energy ion-implantation and two-step base annealing was applied to form a low-leakage and shallow base junction. This technology was applied to an ultra-fast logic LSI, so we confirmed that the 0.25-μm technology can provide bipolar transistors with sufficient performance for use in ULSIs

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Date of Conference:

27-29 Sep 1998