QUBiC3: a 0.5 /spl mu/m BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

QUBiC3, a 0.5 /spl mu/m BiCMOS manufacturing technology is presented. The technology features a double-poly NPN transistor with fT=30 GHz, fmax=60 GHz and NFmin at 2 GHz=0.64 dB, added to a stand-alone CMOS technology. It also includes high-quality passive components and lateral PNP transistors. Low-K dielectrics and a thick fourth layer of metal provide minimized back-end parasitics and high-Q inductors. These features provide increased speed and a higher degree of system integration in wireless communications circuits.