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QUBiC3: a 0.5 μm BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

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7 Author(s)
Pruijmboom, A. ; Philips Semicond., Albuquerque, NM, USA ; Szmyd, D. ; Brock, Reinhard ; Wall, R.
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QUBiC3, a 0.5 μm BiCMOS manufacturing technology is presented. The technology features a double-poly NPN transistor with fT=30 GHz, fmax=60 GHz and NFmin at 2 GHz=0.64 dB, added to a stand-alone CMOS technology. It also includes high-quality passive components and lateral PNP transistors. Low-K dielectrics and a thick fourth layer of metal provide minimized back-end parasitics and high-Q inductors. These features provide increased speed and a higher degree of system integration in wireless communications circuits

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Date of Conference:

27-29 Sep 1998