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A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology

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3 Author(s)
J. T. Colvin ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; S. S. Bhatia ; K. K. O

At high frequencies, substrate effects significantly degrade gain and noise figure of LNAs. A new bond-pad structure presented here significantly reduces substrate effects in a 4.4 GHz LNA resulting in a 10 dB increase in gain and a better than 2 dB improvement in noise figure. The inter-pad isolation of the new bond-pad structure is as much as 30 dB better than that of the conventional bond-pads

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Date of Conference:

27-29 Sep 1998