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On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits

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2 Author(s)
Chuang, C.T. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Lu, P.F.

A detailed study on the scaling property of trench isolation capacitance for advanced high-performance bipolar applications is presented. Using two-dimensional numerical simulations, it is shown that depending on the particular trench used, the trench isolation capacitance has a distinct dependence on the trench width. The impact on the scaled-down high-performance ECL circuits is examined. It is concluded that the design and optimization of scaled-down devices and circuits would require an in-depth understanding of the trench isolation parasitics to realize the full potential of advanced technology.<>

Published in:

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Date of Conference:

3-6 Dec. 1989