Effect of ozone annealing on the charge trapping property of Ta/sub 2/O/sub 5/-Si/sub 3/N/sub 4/-p-Si capacitor grown by low pressure chemical vapor deposition

The effects of ozone annealing on the trapping properties of Ta/sub 2/O/sub 5/ deposited by LPCVD have been examined. It is concluded that the ozone annealing efficiently eliminates electron traps existing throughout the Ta/sub 2/O/sub 5/ film but generates hole traps. Structural or stoichiometric change induced by the ozone annealing is suggested as a reason.