By Topic

Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kato, H. ; Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan ; Seol, K.S. ; Toyoda, T. ; Ohki, Y.

The effects of ozone annealing on the trapping properties of Ta 2O5 deposited by LPCVD have been examined. It is concluded that the ozone annealing efficiently eliminates electron traps existing throughout the Ta2O5 film but generates hole traps. Structural or stoichiometric change induced by the ozone annealing is suggested as a reason

Published in:

Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on

Date of Conference:

27-30 Sep 1998