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Integrated current sensing device for micro IDDQ test

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2 Author(s)
K. Nose ; Inst. of Ind. Sci., Tokyo Univ., Japan ; T. Sakurai

A current sensing device, namely a Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI device with the conventional CMOS process. The HEMOS is also helpful in establishing the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads

Published in:

Test Symposium, 1998. ATS '98. Proceedings. Seventh Asian

Date of Conference:

2-4 Dec 1998