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A novel cap-annealing technique using a WNx film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process

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3 Author(s)
Nogami, T. ; Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan ; Nagaoka, M. ; Iida, N.

A novel cap-annealing technique for n+ implanted layers in GaAs MESFET's was investigated from the viewpoint of thermal stress relaxation. In this technique, the same metal as the gate's-tungsten nitride (WNx) was used for an underlayer of a double-layer annealing cap. FET parameters Vth, K-value, and Ng showed behavior in the short-channel region just as if the short-channel effects were suppressed

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 11 )