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Pseudomorphic InxGa1-xAs/In0.52Al 0.48As modulation doped heterostructures grown by LP-MOVPE

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5 Author(s)
R. G. Pereira ; Centro de Estudos de Telecomunicacoes, Pontificia Univ. Catolica do Rio de Janeiro ; B. Yavich ; C. D. Goncalves ; P. L. Souza
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The authors have studied the transport properties of pseudomorphic InxGa1-xAs/ln0.52Al0.48As modulation doped heterostructures by Shubnikov-de Haas and Hall measurements. The heterostructures were grown on semi-insulating InP substrates by low pressure metal organic vapour phase epitaxy. The In content of the InxGa1-xAs quantum well layers varied from lattice matched with x=0.53 to pseudomorphic heterostructures with x=0.8. Record values of the mobility by sheet carrier concentration product were obtained. For x=0.6, This was 4.79×101625.87×1016/V.s at 300 and 77 K, respectively. These are the largest values published so far

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Electronics Letters  (Volume:34 ,  Issue: 22 )