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Direct integration of solid state stress sensors with single crystal microelectromechanical systems

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1 Author(s)
Haronian, D. ; Fac. of Eng., Tel Aviv Univ., Israel

Unique displacement sensors made of pn diodes and MOS transistors are integrated at the root of silicon micro-beams. Displacement induced stress excites the sensors by modulating the silicon bandgap energy. Owing to their simplicity, these sensors are useful for microelectromechanical systems requiring a massive number of sensors for multiple degree of freedom sensing

Published in:

Electronics Letters  (Volume:34 ,  Issue: 22 )