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RT pulsed operation of metamorphic VCSEL at 1.55 μm

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10 Author(s)
Boucart, J. ; Opto & Groupement d''Internet Econ., Alcatel Corp. Res. Center, Marcoussis, France ; Starck, C. ; Plais, A. ; Derouin, E.
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An all molecular beam epitaxy grown 1.55 μm vertical cavity surface-emitting laser is presented which comprises an InP/InGaAsP bottom mirror, multiple quantum well active layer and a GaAlAs/GaAs metamorphic top mirror directly grown on the InP cavity. This structure takes advantage of the intrinsic optical, electrical and thermal properties of GaAlAs/GaAs material and is compatible with a 2 in process. Such an approach will therefore lead to a drastic reduction in the cost of optical sources and offer the possibility of a massive development of the optical network

Published in:

Electronics Letters  (Volume:34 ,  Issue: 22 )

Date of Publication:

29 Oct 1998

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