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GaAs MESFET distributed baseband amplifier IC with allpass filter network

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4 Author(s)
Kimura, S. ; NTT Opt. Network Syst. Labs., Kanagawa, Japan ; Imai, Y. ; Kikuchi, H. ; Tokumitsu, M.

A distributed baseband amplifier integrated circuits (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 μm gatelength GaAs MESFETs has a 0 to >62.5 GHz bandwidth with a flat gain of 10 dB. Its group delay variation in the 0-50 GHz band is only 12.4 ps. This is ~17 ps smaller than that of a conventional distributed baseband amplifier IC

Published in:

Electronics Letters  (Volume:34 ,  Issue: 22 )