Referenced Items are not available for this document.
A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFETs and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multifinger SOI ESD protection MOSFETs has been derived from the model. We present experimental data to support this design rule
Published in:
Electron Devices, IEEE Transactions on
(Volume:46
,
Issue:
2
)
Date of Publication: Feb 1999
- Page(s):
- 429 - 431
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6164826
- Digital Object Identifier :
- 10.1109/16.740912
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1999
- Sponsored by :
- IEEE Electron Devices Society
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