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EOS/ESD reliability of partially depleted SOI technology

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6 Author(s)
P. Raha ; IC Bus. Div., Hewlett-Packard Co., Palo Alto, CA, USA ; C. Diaz ; E. Rosenbaum ; M. Cao
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A model for predicting the electrostatic discharge (ESD) protection level of PD-SOI MOSFETs and diodes is presented along with data to support the model. The form of the model is compatible with circuit simulators. An important design rule for layout of multifinger SOI ESD protection MOSFETs has been derived from the model. We present experimental data to support this design rule

Published in:

IEEE Transactions on Electron Devices  (Volume:46 ,  Issue: 2 )