By Topic

On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
P. Masson ; Lab. de Phys. des Composants a Semicond., Grenoble, France ; J. -L. Autran ; J. Brini

A simple method is described for separating the charge pumping current from the parasitic tunneling component in a charge pumping measurement performed on MOS transistors with ultrathin (<2 nm) gate oxide thickness. The method is presented here for a two-level charge pumping signal and can be used to significantly increase the accuracy of the technique to extract interface trap parameters in tunnel MOS devices.

Published in:

IEEE Electron Device Letters  (Volume:20 ,  Issue: 2 )