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On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs

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3 Author(s)
Masson, P. ; Lab. de Phys. des Composants a Semicond., Grenoble, France ; Autran, J. ; Brini, J.

A simple method is described for separating the charge pumping current from the parasitic tunneling component in a charge pumping measurement performed on MOS transistors with ultrathin (<2 nm) gate oxide thickness. The method is presented here for a two-level charge pumping signal and can be used to significantly increase the accuracy of the technique to extract interface trap parameters in tunnel MOS devices.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 2 )