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Thermoelectric figure of merit of impurity doped and hot-pressed magnesium silicide elements

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6 Author(s)
Kajikawa, T. ; Shonan Inst. of Technol., Fujisawa, Japan ; Shida, K. ; Shiraishi, K. ; Ito, T.
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Intermetallic magnesium compounds and their solid solutions have been known as potentially promising thermoelectric materials for the middle temperature power generation application. Spark plasma sintering and subsequent hot-pressing were used to make the impurity doped Mg2Si thermoelectric elements. The temperature dependence of thermoelectric properties such as the Seebeck coefficient, electrical conductivity and thermal conductivity was measured to clarify the optimum performance of sintered Mg2Si elements. Moreover, the semiconducting properties such as Hall mobility and carrier concentration were measured by the van der Pauw method. In the case of 0.6 at%Sb doped n-type sintered elements the maximum power factor was obtained 3.0×10-3 W/mK2 at 773 K and the figure of merit was 0.87×10-3 K-1 and dimensionless figure of merit ZT was 0.67. Concerning p-type Mg2 Si elements, silver doped, sintered Mg2Si was made by the same procedure as n-type antimony doped sintered elements. The junction of a Mg2Si element with the electrode was also studied to check the junction resistance between the thermoelectric element and the electrode. It was found that Fe was suitable as an electrode

Published in:

Thermoelectrics, 1998. Proceedings ICT 98. XVII International Conference on

Date of Conference:

24-28 May 1998

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