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Negative binomial yield model parameter extraction using wafer probe bin map data

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2 Author(s)
Langford, R.E. ; Lucent Technol., Orlando, FL, USA ; Liou, J.J.

This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing schemes in the analysis of wafer probe results. The results show that a large number of the wafers analyzed have cluster parameters greater than that typically reported in the literature.

Published in:

Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong

Date of Conference:

29-29 Aug. 1998