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Direct measurement of Cbe and Cbc versus voltage for small HBT's with microwave s-parameters for scaled Gummel-Poon BJT models

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4 Author(s)
Chang, C. ; Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA ; Asbeck, P. ; Zampardi, P. ; Wang, K.C.

A novel method for determining the junction capacitances versus voltage in heterojunction bipolar transistors (HBT's) using s-parameters at microwave frequencies is presented. This new technique has several advantages over traditional approaches, which include: (1) it profiles capacitance at greater forward bias; (2) it enables the direct measurement of minimum geometry transistors; (3) it allows for the accurate extraction of scaled HBT model parameters with emitter length; and (4) it results in improved pad parasitic deembedding for accurate modeling. Both the capacitance-voltage and large-signal HBT model results are shown

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:47 ,  Issue: 1 )