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High-responsivity porous-SiC thin-film pn junction photodetector

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6 Author(s)
Wu, K.H. ; Dept. of Electr. Eng., Nan-Tai Inst. of Technol., Tainan, Taiwan ; Fang, Y.K. ; Hsieh, W.T. ; Ho, J.-J.
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A porous-SiC thin-film photodetector with a pn junction structure has been successfully fabricated on a Si substrate. The developed device exhibits a high responsivity of 0.4 A/W at 25°C for 650 nm irradiation. In particular, the device has a responsivity of 0.35 A/W and a photo/dark current ratio larger than 100 at 200°C, indicating its potential capability for high-temperature operation

Published in:

Electronics Letters  (Volume:34 ,  Issue: 23 )

Date of Publication:

12 Nov 1998

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