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40 Gbit/s GaAs P-HEMT driver module for optical communications

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6 Author(s)
Thiam, A. ; France Telecom/CNET, OPTO+, Marcoussis, France ; Legros, E. ; Vuye, S. ; Andri, P.
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A 40 Gbit/s driver module incorporating a set of two original double-distributed amplifiers, based on 0.15 μm GaAs P-HEMT (high electron mobility transistor) technology, has been designed and realised. This module provides a state-of-the-art output driving voltage of near 3 Vpp, into a 50 Ω load, and an 18 dB gain over a DC to 41.5 GHz bandwidth: it is able to drive a high speed electroabsorption modulator

Published in:

Electronics Letters  (Volume:34 ,  Issue: 23 )