Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Pan, Z. ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Zhang, Y. ; Du, Y. ; Han, H.X.
more authors

We investigated the stress distribution induced in a GaAs layer by the lateral oxidation of an underlying AlAs layer with micro-Raman spectroscopy. Combining with the measurement of micro-photoluminescence (PL), we found smaller strain, better homogeneity and lower density of the nonradiative recombination center for oxidized GaAs-AlAs heterostructures containing a thin AlGaAs middle layer compared to that without the AlGaAs layer

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998