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Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy

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5 Author(s)
Pan, Z. ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Zhang, Y. ; Du, Y. ; Han, H.X.
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We investigated the stress distribution induced in a GaAs layer by the lateral oxidation of an underlying AlAs layer with micro-Raman spectroscopy. Combining with the measurement of micro-photoluminescence (PL), we found smaller strain, better homogeneity and lower density of the nonradiative recombination center for oxidized GaAs-AlAs heterostructures containing a thin AlGaAs middle layer compared to that without the AlGaAs layer

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998