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Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure

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4 Author(s)
S. Iwamoto ; Inst. of Ind. Sci., Tokyo Univ., Japan ; O. Matoba ; T. Shimura ; K. Kuroda

We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 μm, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998