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Uncooled operation of 1.3 μm AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy

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8 Author(s)
Savolainen, P. ; Dept. of Phys., Tampere Univ. of Technol., Finland ; Toivonen, M. ; Orsila, S. ; Pessa, M.
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All solid source molecular beam epitaxy (SSMBE), where only solid group-V sources are used, eliminates fabrication problems. We present our results on the development of 1.3 μm AlGaInAs-AlInAs-InP laser diodes, and show that high-performance laser diodes can be prepared from SSMBE grown material

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998