By Topic

High power ultrafast semiconductor lasers-intracavity dynamics and the implications for future development in modelocked semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
S. Gee ; Center for Res. & Educ. in Opt. & Lasers, Univ. of Central Florida, Orlando, FL, USA ; G. Alphonse ; J. Connolly ; C. P. J. Barty
more authors

The pulse shaping dynamics are measured and explained using self phase locking (SPM), saturable absorption and group velocity dispersion (GVD). In addition, intracavity spectral shaping and inverse bow tie SOAs are shown to be promising for future pulsewidth reduction and high power generation, respectively

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998