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80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors

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6 Author(s)
Agarwal, B. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Lee, Q. ; Mensa, Dino ; Pullela, R.
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We report distributed amplifiers with 80 GHz bandwidth and 6.7 dB mid-band gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBT's have very high fmax (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 12 )