Referenced Items are not available for this document.
Transients of self-heating semiconductor devices are theoretically investigated based on a feedback circuit model, which is composed of three sub-circuits describing the isothermal electrical characteristics, thermal impedance, and temperature dependence of the electrical characteristics of the devices, respectively. Analytical expressions of the frequency and transient responses have been derived for both the electrical and thermal characteristics of self-heating devices, yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The model is verified by the transient electrical-response measurement of a GaInP/GaAs heterojunction bipolar transistor
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:46
,
Issue:
12
)
Date of Publication: Dec 1998
- Page(s):
- 2258 - 2263
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 6150648
- Digital Object Identifier :
- 10.1109/22.739207
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1998
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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