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Browse Journals & Magazines > Microwave Theory and Techniqu ...> Volume:46 Issue:12 Help

Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications

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11 Author(s)
Parikh, Primit ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Ibbetson, J. ; Mishra, Umesh ; Docter, D.
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A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al2O3 obtained by the wet oxidation of Al0.98GaAs in steam is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35-μm gate-length GOI MESFETs exhibiting a record PAE of 72% at a drain voltage of 3 V at 4 GHz are demonstrated

Published in:
Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 12 )

Date of Publication: Dec 1998

Page(s):
2202 - 2207
ISSN :
0018-9480
INSPEC Accession Number:
6150640
Digital Object Identifier :
10.1109/22.739197
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1998
Sponsored by :
IEEE Microwave Theory and Techniques Society

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