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Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications

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11 Author(s)
P. Parikh ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; J. Ibbetson ; U. Mishra ; D. Docter
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A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al2O3 obtained by the wet oxidation of Al0.98GaAs in steam is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35-μm gate-length GOI MESFETs exhibiting a record PAE of 72% at a drain voltage of 3 V at 4 GHz are demonstrated

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IEEE Transactions on Microwave Theory and Techniques  (Volume:46 ,  Issue: 12 )