By Topic

Analysis of high-temperature materials for application to electric weapon technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
G. L. Katulka ; Weapons & Mater. Res. Directorate, U.S. Army Res. Lab., Aberdeen Proving Ground, MD, USA ; J. Kolodzey ; J. Olowolafe

High-power and temperature pulsed-power electronics can be exploited by future military combat systems using advanced electric weapon concepts such as electrothermal-chemical (ETC) and electromagnetic (EM) gun technologies. The results of experiments conducted demonstrate the electrical behavior of SiC and metal ohmic-contact layers as a function of thermal stress. It has been determined from these experiments that both titanium (Ti) and tantalum (Ta) metalization structures will provide a stable electrical ohmic-contact with n-type SiC at elevated temperatures for short bursts that are considered relevant for pulsed-powered electric weapon technologies. The Ti-SiC structure exhibited a stable current-voltage (I-V) characteristic to as much as 800°C for a 10-min burst, while Ta metalizations provided a stable I-V characteristic on SiC even after a temperature burst of 1000°C for as long as a 3-min interval. For samples of n-type, 4H SiC, metalized with (Ti), the standard deviation in resistance (resistivity) of the measured samples is less than 0.17 ohms for a sample having an average resistance of 4.45 ohms. The Ti-SiC sample was exposed to an elevated temperature range of 300-1,120°C. For the Ta contact on SiC, the standard deviation in resistance is 0.05 ohms for a sample having an average resistance of 4.25 ohms over a temperature range of 600-1120° C. The experiments showed that for both Ti and Ta metalized SiC samples, the change in resistivity of annealed samples is between 3.8% and 1.2% compared to the average values of sample resistance based upon the I-V measurement technique used

Published in:

IEEE Transactions on Magnetics  (Volume:35 ,  Issue: 1 )