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Broad-band low-noise preamplifier design with GaAs MESFETs for optical communication systems

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2 Author(s)
Bende, Andre Boyogueno ; Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada ; Kaminska, B.

Classical designs of transimpedance preamplifiers for optical receiver circuits use common-emitter (C-E) or common-source (C-S) input stages. The use of current-mode techniques to design photoreceivers for optical communication systems has been shown to offer significant bandwidth advantages over traditional voltage-mode designs. In this paper, we focus on the design of a wide-band, low-noise photoreceiver in GaAs using current-based amplifying techniques. A 3 dB bandwidth exceeding 3.5 GHz and, 48 dB of gain, along with 12pA/√(Hz) input noise have been simulated with a photodiode of 350 fF equivalent capacitance. Analysis of simulation results are presented, and a prototype has been sent for fabrication in the TQTRx 0.6 μm process from TriQuint Semiconductor's technology

Published in:

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Date of Conference:

29 Sep-2 Oct 1998