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GaInP/GaAs HBTs: state of the art and future trends

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7 Author(s)
Wadsworth, S.D. ; GEC-Marconi Mater. Technol. Ltd., Towcester, UK ; Davies, R.A. ; Davies, I. ; Marsh, S.P.
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The features of GaInP/GaAs HBT technology are illustrated by a description of the advanced general purpose GMMT B20 process, which has fT and fmax typically 50 GHz and a breakdown voltage BVCEO in excess of 10 volts. This process has been used for the design of analogue and digital circuits in order to demonstrate a capability for the fabrication of a range of high linearity and broadband circuits for communication systems. A survey of the current state of the art of HBTs is presented, focusing on the process variations needed to address specific applications, and including a comparison with HBT technologies developed on other material combinations. The key parameters determining high-frequency performance are identified in order to assess future trends and performance limitations, including reliability and thermal issues

Published in:

Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on

Date of Conference:

29 Sep-2 Oct 1998