Numerical simulation of MM-wave TEDs using an improved energy and momentum balance electron transport model

An efficient method for the numerical simulation of MM-wave transferred electron devices in a frequency range around 40 GHz has been presented. The improved energy and momentum balance model (EMB) of electron transport has been applied to take into account the time-dependent phenomena appearing due to the non-stationary electron transport in the active region of a Gunn diode. The fundamental dependencies of the diode current on the carrier diffusion has been also incorporated.