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AlAsSb-based distributed Bragg reflectors for 1.55 μm VCSELs using InAlGaAs as high-index layer

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5 Author(s)
Hall, E. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Kim, J. ; Naone, R. ; Kroemer, H.
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Summary form only given. Arsenide-antimonide mixed group-V compounds are very attractive as materials for AlAsSb distributed Bragg reflectors (DBRs). Grown lattice-matched on InP, such DBRs, thanks primarily to the low refractive index of AlAsSb, would allow the monolithic growth of long-wavelength vertical cavity surface emitting lasers (VCSELs) with relatively few periods compared to traditional InP-InGaAsP DBRs

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:1 )

Date of Conference:

1-4 Dec 1998