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Transconductance in nitride-gate or oxynitride-gate transistors

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3 Author(s)
Khare, M. ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; Wang, X.W. ; Ma, T.P.

Experimental evidence is presented to support the argument that border traps are responsible for the anomalous shape of the transconductance-gate voltage curve in MOS transistors with nitride of oxynitride gate dielectric when compared with their oxide counterpart. Our measurements have revealed a high density of border traps in the gate dielectric containing a high concentration of nitrogen. These border traps appear to affect the transconductance in two ways: in the low gate field region, the trapping of carriers causes a significant reduction of the carrier density and thus a reduced transconductance, while in the high gate field region the "screening" effect of trapped carriers causes a smoothening of the electronic interface, and thus an increased transconductance.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )