By Topic

Process stability of deuterium-annealed MOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Clark, W.F. ; Microelectron. Div., IBM Corp., Essex Junction, VT, USA ; Ference, T.G. ; Hook, T.B. ; Watson, K.M.
more authors

Recent studies have shown improved NMOSFET transistor hot-carrier lifetime with the inclusion of a low-temperature post-metal anneal in a deuterium ambient. There have been few published results, however, on the optimization of the deuterium anneal or on the effect of further processing on deuterium-annealed samples. This paper reports the first results incorporating deuterium anneals at earlier steps in the process and the stability of the deuterium effect with further wafer processing. We also examine the effects of varying deuterium concentration in the anneal from 10 to 100% and annealing at different temperatures. Finally, the effect of combining a deuterium anneal with nitrided gate oxide is discussed.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )