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A new test structure for recombination lifetime profile measurements has been designed and applied, for the first time, to the characterization of very thick bulk silicon wafers. The capability of the new test device to reject parasitic effects, affecting the reliability of the measure in bulk wafers, is shown by means of two-dimensional (2-D) simulations and experimental results. The proposed device has permitted the characterization of two P-type silicon bulk samples. For the first time a clear experimental evidence that the dopant acts as a recombination center has been found in this kind of material.