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An arsenic and phosphorus double implanted source/drain junction is proposed for 0.25- and sub-0.25-/spl mu/m NMOSFET technology. Arsenic is for the shallow high concentration region beneath the silicide, and phosphorus is for the slightly deeper junction to increase junction quality and to reduce junction capacitance. The arsenic and phosphorus double implantation is performed after sidewall formation. The double implanted source/drain junction shows a drastic reduction of reverse leakage current and little effect on the short channel characteristics compared with an arsenic only implanted device. Moreover, the circuit performance is improved by about 2.5%.
Published in:
Electron Device Letters, IEEE
(Volume:20
,
Issue:
1
)
Date of Publication: Jan. 1999
- Page(s):
- 42 - 44
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6138527
- Digital Object Identifier :
- 10.1109/55.737568
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan. 1999
- Sponsored by :
- IEEE Electron Devices Society
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