Skip to Main Content
This work forms a contact hole utilizing the selectively liquid-phase deposited (S-LPD) silicon-oxide technique instead of the conventional reactive ion etching (RIE). The n/sup +//p junction diode with contact hole formed by S-LPD exhibits an order of magnitude less reverse current, larger forward current, smaller ideality factor, and better thermal stability than that formed by RIE. A Schottky junction with S-LPD contact hole also possesses several excellent characteristics, including ideality factor, reverse current and barrier height, even without sintering treatment. These characteristics confirm the effectiveness of the S-LPD technique in replacing conventional RIE to form contact holes, particularly for future ultra-shallow junctions.