Cart (Loading....) | Create Account
Close category search window
 

A new numerical method for extraction of overlap capacitance in a-Si TFTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Pham, H.H. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; Nathan, A.

We present numerically extracted quasi-static parasitic coupling capacitance associated with geometric overlapping in hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) in large-area a-Si imaging systems. The capacitance is extracted using a newly developed computational technique based on exponential expansion of the Green's function. Values of the computed capacitance are compared with those obtained with the parallel-plate approximation. A large discrepancy in values is found when the overlap length is small, due to the dominance of the fringing field in such geometries. Furthermore, the capacitance is found to increase with increasing permittivity of the substrate.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan. 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.