Cart (Loading....) | Create Account
Close category search window
 

Intersubband optical absorption in strained double barrier quantum well infrared photodetectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shi, J.-J. ; Dept. of Phys., Macquarie Univ., North Ryde, NSW, Australia ; Goldys, E.M.

A systematic theoretical investigation of intersubband optical absorption in AlGaAs-AlAs-InGaAs strained double barrier quantum well is presented for the first time. Electron states are calculated within the effective mass approximation which includes the effects of subband nonparabolicity and strain, and found to be in good agreement with experiments. Intersubband optical absorption is investigated using the density matrix formalism with the intrasubband relaxation taken into account. Analytical formulas are given for electron energies, absorption coefficient, and responsivity. Subband nonparabolicity and elastic strain are found to significantly influence both electron states and intersubband optical absorption. The peak absorption wavelength is found to decrease linearly if the In composition is increased, and an approximate formula is given. Electron states and optical absorption are affected by the inner barrier thickness if it is less than 40 Å. The results are useful for design and improvement of the performance of quantum well infrared photodetectors operating in the important wavelength region between 1.5 and 4 μm

Published in:

Electron Devices, IEEE Transactions on  (Volume:46 ,  Issue: 1 )

Date of Publication:

Jan 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.