By Topic

Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 μm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Vonsovici, A. ; Inst. d''Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; Koster, A.

This paper presents an analysis of a silicon-on-insulator (SOI) waveguide structure to be used for phase modulation at 1.3 μm. The device consists of a two-dimensional (2-D) strip waveguide and a p+ /N-/N+ lateral diode to realize the effective index modulation by free-carrier injection. We have calculated that an effective index modulation between 5·10-4 and 10-3 could be obtained with current densities in the range from 500 to 1600 A/cm2. A detailed numerical simulation of the device transient response is also reported. We demonstrate that an effective index modulation of 5·10-4 could be obtained with a cutoff frequency of about 100 MHz. The phase modulator has a predicted figure-of-merit (FoM) of 160°/V/mm and a chirp factor of 25. Due to its full compatibility with complementary metal-oxide-semiconductor (CMOS)-SOI technology, the device is interesting for low-cost silicon-based optoelectronic systems

Published in:

Lightwave Technology, Journal of  (Volume:17 ,  Issue: 1 )