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A comprehensive delay macro modeling for submicrometer CMOS logics

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2 Author(s)
Daga, J.M. ; ATMEL, Rousset, France ; Auvergne, D.

The increasing need for high-performance, cost-effective, application-specific integrated circuits, associated to the reduction of design cycle time, compels designers to manage and optimize the circuit speed performance at each step of the design flow. Circuits are usually designed at gate level; the gate selection or sizing and their placement are driven by estimated delay, hence the need for accurate estimations at the logical level. In the submicrometer range, the gap between gate-level logical estimations and transistor-level electrical simulations dramatically increases. We propose here a comprehensive analytical modeling of the speed performance of CMOS gates with an accuracy comparable to electrical simulators. A design-oriented expression of delay is first developed for CMOS inverters, considering input slope, input-to-output capacitance coupling, and short-circuit current effects. The extension to more complex gates is proposed using a serial array reduction technique taking account of the gate input dependency and the input-slope-induced nonlinearity. Validations are obtained over a large range of design, load, and input slope conditions by comparison with SPICE simulations (level 6 with 0.65-μm foundry specified card model) used as a reference

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 1 )

Date of Publication:

Jan 1999

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