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Annealing effects on multi-quantum well laser diodes after proton irradiation

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7 Author(s)
Zhao, Y.F. ; Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA ; Schrimpf, R.D. ; Patwary, A.R. ; Neifeld, M.A.
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The threshold current of multi-quantum well laser diodes increased by about 1.5 mA at a proton fluence of 6×1012 p/cm2. It recovered gradually due to forward-bias annealing at Ibias=35 mA and became about 0.8 mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1.87×109 p/cm2/s (4.7% at a fluence of 6×1012 p/cm2) is less than that at a proton flux of 1.45×1010 p/cm2/s (10.5% at a fluence of 6×1012 p/cm2) due to the in-situ forward-bias annealing effects

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Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 6 )