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Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs

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4 Author(s)
Hiemstra, D.M. ; SPAR Space Syst., Brampton, Ont., Canada ; Kizeevi, A.A. ; Hou, L.Z. ; Salama, C.A.T.

Total dose and dose rate performance of GaAs MESFET devices of various geometries and sidegating structures at various distances and orientations are presented. Parameters measured include low frequency noise, I-V curves and sidegating. The GaAs MESFET devices tested are shown to be useful to a total dose greater than 500 Mrad(GaAs). The observed reduction in drain current for a given bias point versus total dose is believed to be due to the sinking gate effect. The post irradiation degradation of 1/f noise performance shows a Lorentzian component which grows continuously with total dose to 1 Grad(GaAs). The during irradiation noise performance exhibits a dose rate dependent Lorentzian component. This component has been named selfgating dose rate noise. The sidegating effect exhibits a dose rate dependent degradation which decreases with increasing distance at low dose rates and saturates at a dose rate of approximately 150 krad(GaAs)/hour. The dose rate dependent sidegating effect is reduced with accumulated total dose

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Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 6 )