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Single-event burnout of epitaxial bipolar transistors

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5 Author(s)
Kuboyama, S. ; Nat. Space Dev. Agency of Japan, Tsukuba, Japan ; Sugimoto, K. ; Shugyo, S. ; Matsuda, S.
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Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified

Published in:

Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 6 )

Date of Publication:

Dec 1998

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