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Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs

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6 Author(s)
Titus, J.L. ; Naval Surface Warfare Center, Crane, IN, USA ; Wheatley, C.F. ; Van Tyne, K.M. ; Krieg, J.F.
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The effect of ion energy upon the ion-induced dielectric breakdown response of the capacitor response in vertical power metal-oxide semiconductor field effect transistors (MOSFETs) was investigated. The single event gate rupture response was experimentally determined using mono-energetic ion beams of copper, niobium, and gold. Irradiations were conducted using an ion species tuned to different energies, producing a range of linear energy transfer (LET) values for that ion. Numerous MOSFETs were characterized to identify the onset of ion-induced dielectric breakdown. These data along with previously taken data demonstrated that the ion-induced dielectric breakdown cannot be adequately described in terms of LET, but is better described in terms of atomic number (Z). Based upon these observations, a new semi-empirical expression is presented describing the critical ion-induced breakdown response in terms of Z instead of LET. This expression is shown to be a better single event gate rupture model of the capacitor response

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Nuclear Science, IEEE Transactions on  (Volume:45 ,  Issue: 6 )