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An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

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11 Author(s)
Lai, R. ; Space & Technol. Group, TRW Inc., Redondo Beach, CA, USA ; Barsky, M. ; Huang, T. ; Sholley, M.
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We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz. The circuit was fabricated using a pseudomorphic 20-nm In0.65Ga0.35As channel HEMT structure grown on a 3-in InP substrate by MBE. Based on the measured circuit results, the intrinsic exhibits an Fmax greater than 400 GHz

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:8 ,  Issue: 11 )

Date of Publication:

Nov 1998

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