By Topic

Coplanar waveguides on silicon substrate with thick oxidized porous silicon (OPS) layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Choong-Mo Nam ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea ; Young-Se Kwon

The problem of high dielectric loss of waveguide on silicon in the microwave region can be solved by utilizing a thick silicon dioxide layer that is formed by silicon substrate anodization and oxidation processes. Coplanar waveguides (CPW's) are fabricated on silicon substrate with a 20-μm-thick oxidized porous silicon (OPS) layer and demonstrate very high performance of 0.1-dB/mm attenuation at 4 GHz. Thus, the OPS process is promising for gigaherz applications of silicon substrates.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:8 ,  Issue: 11 )