Cart (Loading....) | Create Account
Close category search window
 

Some aspects in the design of discrete MOS-bipolar Darlington power switches

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Biswas, S.K. ; Dept. of Electr. Eng., Jadavpur Univ., Calcutta, India ; Basak, B.

The authors examine the switching behaviour of a MOS-bipolar Darlington switch and study the influence of principal parameters in order to take them into account for the successful design of a high-performance Darlington switch. Results indicate that the power MOSFET should be selected with an adequate safe operating area (SOA), low drain-source resistance, and low gate charge factor. The bipolar transistor should have adequate SOA, low base-emitter drop, and high current gain. The drive circuit should have a low impedance and should provide a steady negative drive during the off period. While paralleling the Darlingtons, the MOSFETs and bipolar transistors should be paralleled separately, and then joined together in Darlington with minimum wire lengths or loops

Published in:

Industry Applications, IEEE Transactions on  (Volume:27 ,  Issue: 2 )

Date of Publication:

Mar/Apr 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.