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Resonant mechanical magnetic sensor in standard CMOS

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3 Author(s)
Eyre, B. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Pister, K.S.J. ; Kaiser, W.

A novel micromechanical magnetic sensor has been built and tested. The field is detected by measuring the vibration amplitude of a mechanical Lorentz force oscillator. This device is made from a standard 2-μm CMOS fabrication process with a post-processing etch step to undercut and release the sensor. When operated at the resonant frequency of the mechanical system, a sensitivity of 20 μV/G was measured.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 12 )