Referenced Items are not available for this document.
Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8/spl times/10/sup -6/ /spl Omega/-cm/sup 2/. The average value and standard deviation (/spl Delta/Rc) of the contact resistance (Rc) were 0.73 and 0.07 /spl Omega/-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 /spl Omega/-mm and /spl Delta/Rc of 0.16 /spl Omega/-mm. The improved uniformity was attributed to the uniform penetration of the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.
Published in:
Electron Device Letters, IEEE
(Volume:19
,
Issue:
12
)
Date of Publication: Dec. 1998
- Page(s):
- 481 - 483
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6107972
- Digital Object Identifier :
- 10.1109/55.735753
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1998
- Sponsored by :
- IEEE Electron Devices Society
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