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A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors

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5 Author(s)
N. Bovolon ; Dept. of Electron. Eng., Padova Univ., Italy ; R. Schultheis ; J. -E. Muller ; P. Zwicknagl
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In high current and power density applications of AlGaAs/GaAs heterojunction bipolar transistors (HBT's), reliability is a critical issue. Therefore, in this letter we show results of a fundamental investigation on the temperature and current dependence of the fast initial rise of the dc-current gain (burn-in), which takes place during stress at current densities beyond those of today's applications. We find that the burn-in occurs at lower device junction temperatures (135/spl deg/C) than previously reported in literature, and that it depends linearly on the current density. An activation energy of 0.4 eV is extracted for the burn-in effect.

Published in:

IEEE Electron Device Letters  (Volume:19 ,  Issue: 12 )